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    • A. Nath, M. Rao, Y-L Tian, et al. "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" JOURNAL OF ELECTRONIC MATERIALS Volume: 43 Issue: 4 p843-849, 2014.

    • R. Nipoti, A. Nath, Y-L Tian et al. "Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers " SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol.27 Issue: 5 055005, MAY 2012

    • R. Nipoti, A Nath, M. Rao, A. Hallen, A Carnera, Y-L Tian “Microwave Annealing of Very High Dose Aluminum Implanted 4H-SiC”, Applied Physics Express , 4, 111301, 2011.

    • Invited article: "Microwave technology for rapid thermal processing reaches ultrahigh temperatures" MRS Bulletin, vol. 35, p181, March , 2010

    • Geetha Aluri, M. Gowda, N. Mahadik, J.A. Schreifels, S. B. Qadri, M.V. Rao, and Y-L Tian "Microwave annealing of Mg-implanted and in situ Be doped GaN", Journal of Applied Physics, issue 108, 083103, 2010

    • Mulpuri Rao, Y-L. Tian, S.B. Qadri, J.A. Freitas, Jr., R. Nipoti, "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors ", Materials Science Forum vol. 645-648, p709-712, 2010 (ICSCRM 2009)

    • N. Mahadik, Syed B Qadri, Siddarth G Sundaresan, Mulpuri V Rao, Yonglai Tian, Qingchun Zhang,"Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layer ", Surface and Coatings Technology vol 203, issue: 17, p2625-2628, 2009

    • S.G. Sundaresan, Y-L. Tian, J.A. Schreifels, N.A. Mahadik, S.B. Qadri, E. Gomar-Nadal, E.D. Williams, J. Zhang, and M.V. Rao, " Ultra-low resistivity Al+-implanted SiC obtained by microwave annealing and a protective graphite cap ", Solid-State Electronics, vol.52, p140-145, 2008

    • S.G. Sundaresan, Y-L. Tian, M.C. Ridgway, J.A. Schreifels, J.J. Kopanski, and M.V. Rao, "Ultra-high temperature annealing of Al + and P+ - implanted silicon carbide", Journal of Applied Physics, issue 101, 073708, 2007

    • S.G. Sundaresan, Y-L. Tian, and M.V. Rao,"Characteristics of Mg doped GaN epilayers subjected to ultra-high temperature microwave annealing using protective caps", Semicond. Sci. Technol. Vol 22, p1151-1156, 2007

    • S.G. Sundaresan, A.V. Davydov, Mark D. Vaudin, Igor Levin, James Mastar, Y-L. Tian, M.V. Rao "Growth of SiC nanowires by a microwave heating-assistant physical vapor transport process using group VIII metal catalysts", Chem. Mater. Vol. 19, p5531-5537, 2007