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3819 Charles Stewart Dr.
Fairfax, VA 22033
Email us at:
Info@lt-technologies.com |
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Applications: Nano-Materials |
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Microwave based sublimation-sandwich method for growth of SiC nanowires
LTT has invented a unique microwave-based sublimation-sandwich method for high yield, controllable growth of SiC nanoswires.
It is a simple and effective method to grow SiC nanowires by combineing the advantages of physical vapor transport (PVT) process
and catalytic vapor-liquid-solid (VLS) growth mechanism.
Prototype of microwave based sublimation-sandwich cell
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Novel features of the prototype
• Fast growth rate: 1-2 micrometer/second, at least 10 to 100 time faster than existing methods.
• High process yield and low cost.
• Control of morphology of SiC nanowires including shape, size and location.
• Potential control of polytypes and doping concentration of SiC nanowires.
• Small and compact cell size. Cost saving due to utilizing small amount of source materials and high throughput due to short time of vacuum pumping cycle
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