Microwave milisecond RTP of next generation
nano-scale (< 65nm node) Si-CMOS devices
As continued miniaturization of silicon devices approaching nano scale, annealing of <65nm node Si-devices requires a significantly
shorter thermal cycle (e.g. millisecond). In contrast to existing RTP methods heating the entire depth of wafer, LTT’s microwave RTP
can selectively heat surface tiny layer of nano-sacle devices while leave other volume of wafer cool. It will provide a promising solution
to meet the challenges and demands in millisecond RTP applications.