As continued miniaturization of silicon devices approaching nano scale, annealing of <65nm node Si-devices requires a significantly shorter thermal cycle (e.g. millisecond). In contrast to existing RTP methods heating the entire depth of wafer, LTT’s microwave RTP can selectively heat surface tiny layer of nano-sacle devices while leave other volume of wafer cool. It will provide a promising solution to meet the challenges and demands in millisecond RTP applications.