Microwave RTP of GaN
GaN is a wide direct bandgap semiconductor suitable for light LEDs,
laser diodes, high-frequency and high temperature device applications.
LTT has performed extensive research on microwave RTP of both Mg in-situ doped
and ion implanted GaN between 1300-1600C for 5-15 seconds with ramping rate >500C/s.
An AIN cap is deposited on and removed from the surface of GaN samples before and after microwawave annealing.
Below are typical results of optical and electrical porperties of annealed Mg-GaN
PL and I-V probe measurements after microwave RTP