GaN is a wide direct bandgap semiconductor suitable for light LEDs, laser diodes, high-frequency and high temperature device applications. LTT has performed extensive research on microwave RTP of both Mg in-situ doped and ion implanted GaN between 1300-1600C for 5-15 seconds with ramping rate >500C/s. An AIN cap is deposited on and removed from the surface of GaN samples before and after microwawave annealing. Below are typical results of optical and electrical porperties of annealed Mg-GaN

PL and I-V probe measurements after microwave RTP